Aluminum-implantation-induced deep levels in n-type 6H–SiC

Title Gallium implantation induced deep levels in n-type 6H-SIC

Electron-irradiation-induced deep levels in n-type 6H–SiC

Low energy electron irradiation induced deep level defects in 6H-SiC: the implication for the microstructure of the deep levels E1/E2.

N-type 6H-SiC samples irradiated with electrons having energies of E(e)=0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E(e)>/=0.3 MeV, deep levels ED1, E(1)/E(2), and E(i) appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded t...

Effect of Impurities on the Raman Scattering of 6H-SiC Crystals

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Aland B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be ind...

Beryllium implantation induced deep level defects in p-type 6H–silicon carbide